Authors: Shan He, Mengfan Guo, Yue Wang, Yuhan Liang, Yang Shen
Published: 2022-04-11
Source: Full article
AbstractMultiplexing physical dimensions to realize multidimensional storage in a single material has been a goal to increase storage density and data security. Multidimensional storage is only achieved in optical storage material (OSM) by far. Poly(vinylidene fluoride) (PVDF), a semicrystalline polymer, is widely studied as a candidate for ferroelectric random access (FeRAM). Herein, the atomic force microscopy (AFM)‐based infrared spectroscopy techniqueis used to induce multilevel phase transformations in PVDF ultrathin film on nanometric scales and for writing/readout of IR signals. An optical/ferroelectric multiplexing PVDF memory, where information can be coded with independent four‐level optical IR and bilevel ferroelectric signals, is demonstrated. High data security and a storage density up to 180 GBit in.−2 are achieved simultaneously. Owing to the different critical temperature for phase transformation (optical data, <167 °C) and polarization switching (ferroelectric data, <100 °C), the multiplexing memory can function both as optical read‐only memory and FeRAM. This work expands material supporting physical dimensions multiplexing beyond OSM for the first time, opening up new opportunities for future high‐capacity, multifunctional nano‐memory. The strategy proposed here enables on‐demand and tunable programming on IR waves, offering prospects for fabrication of active nano‐optical devices.