Synthesis of Intrinsic Magnetic Topological Insulator MnBi<sub>2n</sub>Te<sub>3n+1</sub> Family by Chemical Vapor Transport Method with Feedback Regulation

Authors: Heng Zhang, Yiying Zhang, Yong Zhang, Bo Chen, Jingwen Guo, Yu Du, Jiajun Li, Fuwei Zhou, Fengyi Guo, Yongxin Zhang, Zixiang Zhao, Hangkai Xie, Zhixin Zhang, Tianqi Wang, Wuyi Qi, You Song, Fucong Fei, Xuefeng Wang, Fengqi Song

Published: 2025-04-01

DOI: 10.1002/adma.202405686

Source: Full article


Abstract

AbstractMnBi2nTe3n+1 is a representative family of intrinsic magnetic topological insulators, in which numerous exotic phenomena such as the quantum anomalous Hall effect are expected. The high‐quality crystal growth and magnetism manipulation are the most essential processes. Here a modified chemical vapor transport method using a feedback‐regulated strategy is developed, which provides the closed‐loop control of growth temperature within ± 0.1 °C. Single crystals of MnBi2Te4, MnBi4Te7, and MnBi6Te10 are obtained under different temperature intervals respectively, and show variable tunability on magnetism by finely tuning the growth temperatures. Specifically, the cold‐end temperatures not only vary the strength of antiferromagnetic coupling in MnBi2Te4, but also induce magnetic ground state transitions from antiferromagnetism to ferromagnetism in MnBi4Te7 and MnBi6Te10. In MnBi2Te4 with optimized magnetism, quantized transport with Chern insulator state can be easily replicated. These results provide a systematic picture for the crystal growth and the rich magnetic tunability of MnBi2nTe3n+1 family, providing richer platforms for the related researches combining magnetism and topological physics.