Discovery of a New Cu‐Based Chalcogenide with High <i>zT</i> Near Room Temperature: Low‐Cost Alternative for the Bi<sub>2</sub>Te<sub>3</sub>‐Based Thermoelectrics

Authors: Oleksandr Cherniushok, Taras Parashchuk, G. Jeffrey Snyder, Krzysztof T. Wojciechowski

Published: 2025-03-23

DOI: 10.1002/adma.202420556

Source: Full article


Abstract

AbstractCopper‐based chalcogenides are cost‐effective and environmentally friendly thermoelectric (TE) materials for waste heat recovery. Despite demonstrating excellent thermoelectric performance, binary Cu2X (X = S, Se, and Te) chalcogenides undergo superionic phase transitions above room temperature, leading to microstructural evolution and unstable properties. In this work, a new γ‐phase of Cu6Te3‐xS1+x (0 < x ≤ 1) is discovered, a narrow‐bandgap semiconductor with outstanding thermoelectric performance and high stability. By substituting Te with S in metallic Cu6Te3S, the crystal symmetry is modified and structural phase transitions are eliminated. The γ‐phase exhibits a significantly higher Seebeck coefficient of up to 200 µVK−1 compared to 8.8 µVK−1 for Cu6Te3S at room temperature due to optimized carrier concentration and increased effective mass. Cu6Te3‐xS1+x materials also demonstrate ultralow thermal conductivity (≈0.25 Wm−1K−1), which, in concert with improved power factors, enables a high zT of ≈1.1 at a relatively low temperature of 500 K. Unlike most Cu‐based chalcogenides, the γ‐phase exhibits excellent transport property stability across multiple thermal cycles, making it a cost‐effective and eco‐friendly alternative to Bi2Te3‐based materials. The developed Cu6Te3‐xS1+x is a promising candidate for thermoelectric converters in waste heat recovery, and its potential can be further extended to cooling applications through carrier concentration tuning.