Boltzmann Switching MoS₂ Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit (Adv. Mater. 29/2024)

Authors: Yeon Ho Kim, Wei Jiang, Donghun Lee, Donghoon Moon, Hyun‐Young Choi, June‐Chul Shin, Yeonsu Jeong, Jong Chan Kim, Jaeho Lee, Woong Huh, Chang Yong Han, Jae‐Pil So, Tae Soo Kim, Seong Been Kim, Hyun Cheol Koo, Gunuk Wang, Kibum Kang, Hong‐Gyu Park, Hu Young Jeong, Seongil Im, Gwan‐Hyoung Lee, Tony Low, Chul‐Ho Lee

Published: 2024-07-18

DOI: 10.1002/adma.202470233

Source: Full article

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Abstract

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