Authors: Jiangnan Xia, Jiakun Xue, Ping‐An Chen, Yu Liu, Huan Wei, Jiaqi Ding, Yu Zhang, Chengyuan Peng, Zhenqi Gong, Wenpei Shi, Abd Rashid bin Mohd Yusoff, Yunfeng Deng, Huajie Chen, Lang Jiang, Lei Liao, Yuanyuan Hu
Published: 2025-05-30
Source: Full article
AbstractConventional UV/DUV phototransistors, which rely on wide‐bandgap semiconductor channels, encounter issues with material availability, processing complexity, and performance tunability. Perovskite‐gated phototransistors (PGPTs) are introduced that decouple photoresponse and charge transport by using wide‐bandgap metal halide perovskites (MHPs) as dielectric layers and non‐wide‐bandgap semiconductors as channels. This design offers material flexibility, simplified processing, and enhanced performance. Using the 2D Ruddlesden‐Popper perovskite PEA2PbBr4 (Eg = 3.0 eV) as the dielectric layer and the organic semiconductor (OSC) P3HT as the channel layer, UV phototransistors are successfully achieved with exceptional photodetection performance at operating voltages below 2 V, exhibiting a responsivity of 1960 mA W−1, a specific detectivity of 3 × 1011 Jones, and a response time of ≈20 ms. Fabricated via low‐temperature (≤100 °C) solution processing, this approach facilitates scalable production and is adaptable to various OSCs and other wide‐bandgap MHP dielectrics, such as PEA2PbCl4 (Eg = 3.6 eV) and PEA2SnI4 (Eg = 3.8 eV), extending their potential for DUV detection. As a proof‐of‐concept, an optical decoder for telecommunications is demonstrated using DUV PEA2PbCl4/PDVT‐10 PGPTs, which are immune to ambient light interference. Additionally, these DUV phototransistors show potential for latent fingerprint detection due to their sensitivity to skin absorption characteristics.