Authors: Xiaofei Ma, Zeping Wang, Qinggang Qin, Jiawang Chen, Xue Liu, Fengxia Zou, Zhengyu Xu, Wei Chen, Guanghai Li, Yuan Li, Tianyou Zhai, Liang Li
Published: 2025-03-12
Source: Full article
AbstractOn‐chip polarized photodetectors play a crucial role in advancing ultra‐compact optoelectronic devices for next‐generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and the degree of linear polarization (DoLP) within a single device remains a challenging task, particularly due to the inherently weak polarization states found in naturally anisotropic materials. In this paper, it is reported on the development of a twisted monopole barrier photodetector based on a PdSe2/MoS2/PdSe2 configuration. This photodetector features a rapid response time of 7–12 µs. In an imaging demonstration, it operates as a single‐polarization photodetector, reconstructing AoLP and DoLP distributions of target objects through bias‐switchable polarization detection across a wide spectral range, all without the plasmonic/metasurface nanostructures or polarization filters. Additionally, it demonstrates bipolar characteristics under zero‐bias conditions at room temperature, enabling dual‐binary coding for polarimetric‐encoded communication. These combination of features positions the photodetector as a highly promising candidate for on‐chip applications.