Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals

Authors: Biao Qin, Chaojie Ma, Quanlin Guo, Xiuzhen Li, Wenya Wei, Chenjun Ma, Qinghe Wang, Fang Liu, Mengze Zhao, Guodong Xue, Jiajie Qi, Muhong Wu, Hao Hong, Luojun Du, Qing Zhao, Peng Gao, Xinqiang Wang, Enge Wang, Guangyu Zhang, Can Liu, Kaihui Liu

Published: 2024-07-04

DOI: 10.1126/science.ado6038

Source: Full article


Abstract

Rhombohedral-stacked transition-metal dichalcogenides (3R-TMDs), which are distinct from their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and coherently enhanced nonlinear optical responses. However, surface epitaxial growth of large multilayer 3R-TMD single crystals is difficult. We report an interfacial epitaxy methodology for their growth of several compositions, including molybdenum disulfide (MoS