MoTe₂ Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering

Authors: Rui Ma, Huairuo Zhang, Youngdong Yoo, Zachary Patrick Degregorio, Lun Jin, Prafful Golani, Javad Ghasemi Azadani, Tony Low, James E. Johns, Leonid A. Bendersky, Albert V. Davydov, Steven J. Koester

Published: 2019-06-27

DOI: 10.1021/acsnano.9b02785

Source: Full article

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Abstract

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