Authors: Yulin Zheng, Xin Tang, Wenliang Wang, Ling Jin, Guoqiang Li
Published: 2020-11-11
Source: Full article
AbstractFollowing the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D α‐Ga2S3 as an important member of group IIIA–VIA semiconductors has outstanding optoelectronic properties. However, the controllable large‐size synthesis of ultrathin α‐Ga2S3 nanosheets still remains a huge challenge. In this paper, a large‐size ultrathin nanosheets of hexagonal Ga2S3 is prepared via an improved chemical vapor deposition method. High‐performance photodetectors based on the ultrathin Ga2S3 nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W−1/1.4 × 1012 Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga2S3 nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next‐generation nanoscale smart optoelectronics.