Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component - KIVIRID

Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component

Authors: Peng Wu, Joerg Appenzeller

Published: 2021-03-11

DOI: 10.1021/acsnano.0c10344

Source: Full article

Abstract

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