Authors: Amina Belkadi, Ayendra Weerakkody, Garret Moddel
Published: 2021-05-18
DOI: 10.1038/s41467-021-23182-0
Source: Full article
AbstractAlthough the effect of resonant tunneling in metal-double-insulator-metal (MI2M) diodes has been predicted for over two decades, no experimental demonstrations have been reported at the low voltages needed for energy harvesting rectenna applications. Using quantum-well engineering, we demonstrate the effects of resonant tunneling in a Ni/NiO/Al2O3/Cr/Au MI2M structures and achieve the usually mutually exclusive desired characteristics of low resistance ($${R}_{0}^{DC} \sim$$