Low Power MoS<sub>2</sub>/Nb<sub>2</sub>O<sub>5</sub> Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)

Authors: Jae Hyeon Nam, Seyoung Oh, Hye Yeon Jang, Ojun Kwon, Heejeong Park, Woojin Park, Jung‐Dae Kwon, Yonghun Kim, Byungjin Cho

Published: 2021-10-02

DOI: 10.1002/adfm.202170294

Source: Full article

Abstract

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