Dramatic Tuning of the Topological Hall Effect in A<sub>x</sub>RhO<sub>2</sub>(A = K, Rb, and Cs) Crystals by Electron Concentration or Cation

Authors: Yang‐Yang Lv, Bin‐Bin Zhang, Xiao Li, Dajun Lin, Shu‐Hua Yao, Ye Xiong, Jian Zhou, Y. B. Chen, Hongming Weng, Y. G. Shi, Ming‐Hui Lu, Yan‐Feng Chen

Published: 2022-12-27

DOI: 10.1002/adfm.202211214

Source: Full article


Abstract

AbstractTopological Hall effect, being an unconventional anomalous Hall effect, is originated from the real‐space Berry curvature caused by the nontrivial topological spin textures in materials. Manipulations of nontrivial magnetic structure and related topological Hall effect are very important for the study of the chiral magnet. Herein, it is experimentally observed that the significant topological Hall conductivity σxyin antiferromagnetic K0.5RhO2can reach 3.5% of ν = 1 quantum conductivity below 20 K. Furthermore, by adjusting the concentration of K‐cation different from 0.5 in KxRhO2or substituting the K cations by Rb or Cs to form Rb0.5RhO2or Cs0.5RhO2, it is observed that the topological Hall effect is much weakened or even disappeared. This evolution, verified by the theoretical calculations, is attributed to the unstable ground state of the non‐coplanar spin structure in KxRhO2(x = 0.4 and 0.6) and Cs0.5RhO2. The significantly tunable topological Hall effect in AxRhO2makes it prospective on logical/sensor devices of spintronics.