Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition

Authors: Xingchen Pang, Yang Wang, Yuyan Zhu, Zhenhan Zhang, Du Xiang, Xun Ge, Haoqi Wu, Yongbo Jiang, Zizheng Liu, Xiaoxian Liu, Chunsen Liu, Weida Hu, Peng Zhou

Published: 2024-02-22

DOI: 10.1038/s41467-024-46050-z

Source: Full article


Abstract

AbstractIn-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm2) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 106, and exceptionally high room-temperature mobility up to 406.7 cm2 V−1 s−1, four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm–940 nm), achieving function of motion detection and recognition.