Authors: Xiao‐Hui Guo, Jia Zhang, Kai‐Lun Yao, Lin Zhu
Published: 2025-04-01
Source: Full article
AbstractThe development of next‐generation spin nanomemory systems faces the challenge of achieving nonvolatile electrical control of magnetic states in magnetic tunnel junctions. Here, a strategy is proposed using trilayer van der Waals heterostructures combining an A‐type antiferromagnetic YBr2 bilayer and a ferroelectric Al2Se3 monolayer. Nonvolatile modulation of the ferroelectric polarization direction of Al2Se3 can flip the interlayer magnetic coupling of YBr2 between ferromagnetic and antiferromagnetic states. The interlayer magnetic phase transition is caused by the band structure shift and interfacial charge transfer induced by the polarization field. The TiTe2/2L‐YBr2/Al2Se3/TiTe2 multiferroic devices achieve a fully electrically controlled tunneling magnetoresistance with a ratio of up to 11550% and an exceptionally low resistance‐area product of 0.28 Ω µm2 by establishing a good P‐type Ohmic contact between the TiTe2 electrode and the central heterojunction. There is also a perfect spin filtering effect. This work provides new perspectives for the development of low‐power, fast‐response, nonvolatile and fully electrically controlled spintronic memory devices.