Authors: Wenxuan Sun, Yequan Chen, Ruijie Xu, Wenzhuo Zhuang, Di Wang, Long Liu, Anke Song, Guozhong Xing, Yongbing Xu, Rong Zhang, Cui‐Zu Chang, Xuefeng Wang
Published: 2025-03-12
Source: Full article
AbstractOver the past decade, topological insulators have received enormous attention for their potential in energy‐efficient spin‐to‐charge conversion, enabled by strong spin‐orbit coupling and spin‐momentum locked surface states. Despite extensive research, the spin‐to‐charge conversion efficiency, usually characterized by the spin Hall angle (θSH), remains relatively low at room temperature. In this work, pulsed laser deposition is employed to fabricate high‐quality ternary topological insulator (Bi0.1Sb0.9)2Te3 thin films on magnetic insulator Y3Fe5O12. It is found that the value of θSH reaches ≈0.76 at room temperature and increases to ≈0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. These findings provide an innovative approach to tailoring the spin‐to‐charge conversion in topological insulators and pave the way for their applications in energy‐efficient spintronic devices.