Authors: Bo Wang, Ningning Zhang, Jie You, Xin Wu, Yichi Zhang, Tian Miao, Yang Liu, Zuimin Jiang, Zhenyang Zhong, Hao Sun, Hui Guo, Huiyong Hu, Liming Wang, Zhangming Zhu
Published: 2025-06-29
DOI: 10.1002/inf2.70048
Source: Full article
The Ge‐based MoS2 floating‐gate phototransistor demonstrates excellent storage characteristics and bidirectional light response capabilities. Leveraging these features, wavelength extraction from visible to infrared is achieved at the device level, significantly reducing system complexity and enhancing image recognition efficiency.