Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS<sub>2</sub> Transistor Operating in Subthreshold Regime

Authors: Eunyeong Yang, Sekwon Hong, Jiwon Ma, Sang-Joon Park, Dae Kyu Lee, Tanmoy Das, Tae-Jun Ha, Joon Young Kwak, Jiwon Chang

Published: 2024-08-15

DOI: 10.1021/acsnano.4c04316

Source: Full article

Abstract

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