Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Authors: Pierre Noé, Anthonin Verdy, Francesco d’Acapito, Jean-Baptiste Dory, Mathieu Bernard, Gabriele Navarro, Jean-Baptiste Jager, Jérôme Gaudin, Jean-Yves Raty

Published: 2020-02-29

DOI: 10.1126/sciadv.aay2830

Source: Full article

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Abstract

We reveal the microscopic origin of the ovonic threshold switching mechanism.