A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Authors: Satyaprasad P. Senanayak, Mojtaba Abdi-Jalebi, Varun S. Kamboj, Remington Carey, Ravichandran Shivanna, Tian Tian, Guillaume Schweicher, Junzhan Wang, Nadja Giesbrecht, Daniele Di Nuzzo, Harvey E. Beere, Pablo Docampo, David A. Ritchie, David Fairen-Jimenez, Richard H. Friend, Henning Sirringhaus

Published: 2020-04-10

DOI: 10.1126/sciadv.aaz4948

Source: Full article

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Abstract

Hysteresis-free operational stable perovskite FETs is demonstrated through ionic passivation and crystal modification.