Authors: Hyoju Park, Yi Wen, Sylvia Xin Li, Woojin Choi, Gun‐Do Lee, Michael Strano, Jamie H. Warner
Published: 2021-05-08
Source: Full article
AbstractPrecise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub‐2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non‐hydrogenated covalently bonded C molecules embedded in the insulating hBN.