Authors: Ruqaiya Al‐Abri, Nawal Al Amairi, Stephen Church, Conor Byrne, Sudhakar Sivakumar, Alex Walton, Martin H. Magnusson, Patrick Parkinson
Published: 2023-04-24
Source: Full article
AbstractBottom–up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry, or doping. Using photoluminescence spectroscopy of a population of more than 11 000 individual zinc‐doped gallium arsenide nanowires, inhomogeneity is revealed in, and correlation between doping and nanowire diameter by use of a Bayesian statistical approach. Recombination of hot‐carriers is shown to be responsible for the photoluminescence lineshape; by exploiting lifetime variation across the population, hot‐carrier dynamics is revealed at the sub‐picosecond timescale showing interband electronic dynamics. High‐throughput spectroscopy together with a Bayesian approach are shown to provide unique insight in an inhomogeneous nanomaterial population, and can reveal electronic dynamics otherwise requiring complex pump‐probe experiments in highly non‐equilibrium conditions.