Authors: Lizheng Wang, Junlin Xiong, Bin Cheng, Yudi Dai, Fuyi Wang, Chen Pan, Tianjun Cao, Xiaowei Liu, Pengfei Wang, Moyu Chen, Shengnan Yan, Zenglin Liu, Jingjing Xiao, Xianghan Xu, Zhenlin Wang, Youguo Shi, Sang-Wook Cheong, Haijun Zhang, Shi-Jun Liang, Feng Miao
Published: 2022-12-09
Source: Full article
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and readout operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a previously unimplemented symmetric write and readout mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe