Authors: Lei Han, Xizhi Fu, Rui Peng, Xingkai Cheng, Jiankun Dai, Liangyang Liu, Yidian Li, Yichi Zhang, Wenxuan Zhu, Hua Bai, Yongjian Zhou, Shixuan Liang, Chong Chen, Qian Wang, Xianzhe Chen, Luyi Yang, Yang Zhang, Cheng Song, Junwei Liu, Feng Pan
Published: 2024-01-26
Source: Full article
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary “0” and “1.” However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet Mn