Authors: Taebin Lim, Junmi Lee, Jin Jang
Published: 2025-02-12
Source: Full article
AbstractIn this study, a In2Se3 ferroelectric‐semiconductor field‐effect transistor is reported for highly sensitive temperature sensing. The high thermal sensitivity of 696%/°C can be achieved by integrating semiconducting behavior and ferroelectricity in In2Se3 thin film. By inducing a polarization up state in the ferroelectric‐semiconductor by applying gate bias, the carriers within the In2Se3 semiconductor are depleted, suppressing channel formation. Under polarization up state, off‐currents are very sensitive to temperature variation, following variable range hopping conduction. The drain currents are found to be in proportional to with T0 of 1.27 × 1012 K. To achieve variable range hopping transport, defective In2Se3 is deposited at low temperatures (240 °C) using spray pyrolysis. Fabricated In2Se3 temperature sensor on flexible polyimide substrate can detect a broad range of temperatures (RT to 200 °C) with high stability, exhibiting excellent temperature sensing performance. In addition, the very thin flexible temperature sensor array is demonstrated for large area spatial temperature sensing.